Backscattering of Dirac fermions in HgTe quantum wells with a finite gap

Details Backscattering of Dirac fermions in HgTe quantum wells with a finite gap Backscattering of Dirac fermions in HgTe quantum wells with a finite gap

2011-01-29

arxiv.org/abs/1101.5692v2

Phys. Rev. Lett. 106, 076802 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

version as published in Phys. Rev. Lett. 106, 076802 (2011)

Scientific paper

10.1103/PhysRevLett.106.076802

The density-dependent mobility of n-type HgTe quantum wells with inverted band ordering has been studied both experimentally and theoretically. While semiconductor heterostructures with a parabolic dispersion exhibit an increase in mobility with carrier density, high quality HgTe quantum wells exhibit a distinct mobility maximum. We show that this mobility anomaly is due to backscattering of Dirac fermions from random fluctuations of the band gap (Dirac mass). Our findings open new avenues for the study of Dirac fermion transport with finite and random mass, which so far has been hard to access.

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