Background charge fluctuation in a GaAs quantum dot device

Details Background charge fluctuation in a GaAs quantum dot device Background charge fluctuation in a GaAs quantum dot device

2004-07-09

arxiv.org/abs/cond-mat/0407230v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to be published in Appl. Phys. Lett

Scientific paper

10.1063/1.1777802

We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and tunneling barriers. The estimated potential fluctuation increases almost linearly with temperature, which is consistent with a simple model of the 1/f noise. We find that the fluctuation increases very slightly when electrons are injected into excited states of the quantum dot.

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