Back-action Driven Electron Spin Singlet-Triplet Excitation in a GaAs Quantum Dot

Details Back-action Driven Electron Spin Singlet-Triplet Excitation in a GaAs Quantum Dot Back-action Driven Electron Spin Singlet-Triplet Excitation in a GaAs Quantum Dot

2011-09-26

arxiv.org/abs/1109.5734v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

In a single quantum dot (QD), the electrons were driven out of thermal equilibrium by the back-action from a nearby quantum point contact (QPC). We found the driving to energy excited states can be probed with the random telegraph signal (RTS) statistics, when the excited states relax slowly compared with RTS tunneling rate. We studied the last few electrons, and found back-action driven spin singlet-triplet (S-T) excitation for and only for all the even number of electrons. We developed a phenomenological model to quantitatively characterize the spin S-T excitation rate, which enabled us to evaluate the influence of back-action on spin S-T based qubit operations.

Affiliated with

Also associated with

No associations

Rating

Back-action Driven Electron Spin Singlet-Triplet Excitation in a GaAs Quantum Dot does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Back-action Driven Electron Spin Singlet-Triplet Excitation in a GaAs Quantum Dot, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Back-action Driven Electron Spin Singlet-Triplet Excitation in a GaAs Quantum Dot will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-61681