Avalanche-Induced Current Enhancement in Semiconducting Carbon Nanotubes

Details Avalanche-Induced Current Enhancement in Semiconducting Carbon Nanotubes Avalanche-Induced Current Enhancement in Semiconducting Carbon Nanotubes

2008-08-08

arxiv.org/abs/0808.1148v2

PRL 101, 256804 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevLett.101.256804

Semiconducting carbon nanotubes under high electric field stress (~10 V/um) display a striking, exponential current increase due to avalanche generation of free electrons and holes. Unlike in other materials, the avalanche process in such 1D quantum wires involves access to the third sub-band, is insensitive to temperature, but strongly dependent on diameter ~exp(-1/d^2). Comparison with a theoretical model yields a novel approach to obtain the inelastic optical phonon emission length, L_OP,ems ~ 15d nm. The combined results underscore the importance of multi-band transport in 1D molecular wires.

Affiliated with

Also associated with

No associations

Rating

Avalanche-Induced Current Enhancement in Semiconducting Carbon Nanotubes does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Avalanche-Induced Current Enhancement in Semiconducting Carbon Nanotubes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Avalanche-Induced Current Enhancement in Semiconducting Carbon Nanotubes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-29239