Attractive interaction of Indium with point defects and silicon in GeSi

Details Attractive interaction of Indium with point defects and silicon in GeSi Attractive interaction of Indium with point defects and silicon in GeSi

2007-11-02

arxiv.org/abs/0711.0292v1

Physics

Condensed Matter

Materials Science

7 pages and 4 figures

Scientific paper

In electron irradiated Ge$_{0.98}$Si$_{0.02}$, In-vacancy and In-interstitial complexes were observed in analogy with defects in pure Ge. Isochronal annealing measurements reveal that the temperature of dissociation of In-defect complexes deviate from pure Ge subjected to identical e-irradiation, which is explained on the basis of strain induced by undersized silicon atoms affecting the binding energy of In-V and In-I complexes. Besides the pairing with intrinsic defects the interaction of In with Si atoms is observed resulting in several different configurations. Complementary experiments performed in Ge$_{0.98}$Si$_{0.02}$ and Ge$_{0.94}$Si$_{0.06}$ elucidate the attractive interaction between In and Si.

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