Atomistic simulations of the implantation of low energy boron and nitrogen ions into graphene

Details Atomistic simulations of the implantation of low energy boron and nitrogen ions into graphene Atomistic simulations of the implantation of low energy boron and nitrogen ions into graphene

2011-02-03

arxiv.org/abs/1102.0645v1

Phys. Rev. B 83, 115424 (2011)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevB.83.115424

By combining classical molecular dynamics simulations and density functional theory total energy calculations, we study the possibility of doping graphene with B/N atoms using low-energy ion irradiation. Our simulations show that the optimum irradiation energy is 50 eV with substitution probabilities of 55% for N and 40% for B. We further estimate probabilities for different defect configurations to appear under B/N ion irradiation. We analyze the processes responsible for defect production and report an effective swift chemical sputtering mechanism for N irradiation at low energies (~125 eV) which leads to production of single vacancies. Our results show that ion irradiation is a promising method for creating hybrid C-B/N structures for future applications in the realm of nanoelectronics.

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