Atomistic investigation of low-field mobility in graphene nanoribbons

Details Atomistic investigation of low-field mobility in graphene nanoribbons Atomistic investigation of low-field mobility in graphene nanoribbons

2011-03-01

arxiv.org/abs/1103.0291v1

published in IEEE Trans. Electr. Dev. 2011

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 9 figures

Scientific paper

10.1109/TED.2010.2100045

We have investigated the main scattering mechanisms affecting mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects, and ionized impurities, and we have defined a methodology based on simulations of statistically meaningful ensembles of nanoribbon segments. Edge disorder heavily affects mobility at room temperature in narrower nanoribbons, whereas charged impurities and phonons are hardly the limiting factors. Results are favorably compared to the few experiments available in the literature.

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