Atomically precise placement of single dopants in Si

Details Atomically precise placement of single dopants in Si Atomically precise placement of single dopants in Si

2003-07-24

arxiv.org/abs/cond-mat/0307599v1

Physics

Condensed Matter

Materials Science

5 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.91.136104

We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si (001) and show that it is possible to thermally incorporate P atoms into Si (001) below the H desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H-lithography. We demonstrate the positioning of single P atoms in Si with ~ 1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.

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