Atomic structure, energetics, and dynamics of topological solitons in Indium chains on Si(111) surfaces

Details Atomic structure, energetics, and dynamics of topological solitons in Indium chains on Si(111) surfaces Atomic structure, energetics, and dynamics of topological solitons in Indium chains on Si(111) surfaces

2010-09-06

arxiv.org/abs/1009.1088v3

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.106.026801

Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variable-temperature measurements of the soliton population allow us to determine the soliton formation energy to be ~60 meV, smaller than one half of the band gap of ~200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field-enhanced soliton dynamics.

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