Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy

Details Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy

2009-12-03

arxiv.org/abs/0912.0754v1

Nanotechnology 20, 295302 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1088/0957-4484/20/49/495302

In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface with a scanning tunneling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process have been investigated. Lithographic patterns with feature-sizes from 200 nm to 1.8 nm have been achieved by varying the tip-to-sample bias. These results open up the possibility of a scanning-probe lithography approach to the fabrication of future atomic-scale devices in germanium.

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