Atomic Scale Memory at a Silicon Surface

Details Atomic Scale Memory at a Silicon Surface Atomic Scale Memory at a Silicon Surface

2002-04-11

arxiv.org/abs/cond-mat/0204251v2

Physics

Condensed Matter

13 pages, 5 figures, accepted by Nanotechnology

Scientific paper

10.1088/0957-4484/13/4/312

The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of 5 atom rows. The writing process involves removal of Si atoms with the tip of a scanning tunneling microscope. The memory can be reformatted by controlled deposition of silicon. The constraints on speed and reliability are compared with data storage in magnetic hard disks and DNA.

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