Atomic ordering in self-assembled Ge:Si(001) islands observed by X-ray scattering

Details Atomic ordering in self-assembled Ge:Si(001) islands observed by X-ray scattering Atomic ordering in self-assembled Ge:Si(001) islands observed by X-ray scattering

2004-11-25

arxiv.org/abs/cond-mat/0411642v1

Physics

Condensed Matter

Materials Science

13 pages, 4 figures

Scientific paper

X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe domains in both islands and wetting layer. The modeling of x-ray profiles reveals the presence of antiphase boundaries separating the ordered domains in a limited region of the islands where the stoichiometry is close to Si0.5Ge0.5.

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