Atomic and electronic structure of zerolayer and quasi-free standing monolayer graphene on SiC(0001)

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

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Scientific paper

Graphene epitaxially grown on the silicon face of silicon carbide resides on top of a carbon layer, known as zerolayer graphene. This layer is in part covalently bound to the SiC substrate and its structural and electronic properties are controversially debated. In the present work we report scanning tunnelling microscopy (STM) studies of zerolayer epitaxially grown on SiC(0001), and of the zerolayer decoupled from the substrate by hydrogen intercalation, the so called quasi-free standing monolayer graphene (QFMLG). Notably, atomically-resolved STM images of the zerolayer reveal that, within the periodic structural corrugation of this interfacial layer, the arrangement of the atoms is topologically identical to that of graphene. After hydrogen intercalation, we show that the resulting QFMLG is relieved from the periodic corrugation and presents no obvious defective sites.

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