Atomic and electronic engineering of p-GaAs-(Cs, O)-vacuum interface

Details Atomic and electronic engineering of p-GaAs-(Cs, O)-vacuum interface Atomic and electronic engineering of p-GaAs-(Cs, O)-vacuum interface

Jun 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001aipc..570..901a&link_type=abstract

The fourteenth international spin physics symposium, SPIN2000. AIP Conference Proceedings, Volume 570, pp. 901-907 (2001).

Physics

Electron Sources, Photomultipliers, Phototubes And Photocathodes

Scientific paper

Preparation procedures generally used to prepare GaAs surface for
subsequent activation to NEA state are analyzed. It is emphasized that
together with surface clearness other properties of surface are
important, if extreme values of photocathode parameters are needed. .

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