Physics – Condensed Matter – Materials Science
Scientific paper
2008-08-08
Physics
Condensed Matter
Materials Science
Scientific paper
We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here establishes the synthesis of graphene films on a technologically viable basis.
Bostwick Aaron
Emtsev Konstantin V.
Horn Karsten
Jobst Johannes
Kellogg Gary L.
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