Asymmetry gap in the electronic band structure of bilayer graphene

Details Asymmetry gap in the electronic band structure of bilayer graphene Asymmetry gap in the electronic band structure of bilayer graphene

2006-08-09

arxiv.org/abs/cond-mat/0608221v2

Phys. Rev. B 74, 161403(R) (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 eps figures

Scientific paper

10.1103/PhysRevB.74.161403

A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap $\Delta$ between the conduction and valence bands. In particular, a self consistent Hartree approximation is used to describe imperfect screening of an external gate, employed primarily to control the density $n$ of electrons on the bilayer, resulting in a potential difference between the layers and a density dependent gap $\Delta (n)$. We discuss the influence of a finite asymmetry gap $\Delta (0)$ at zero excess density, caused by the screening of an additional transverse electric field, on observations of the quantum Hall effect.

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