Asymmetric metal-insulator transition in disordered ferromagnetic films

Details Asymmetric metal-insulator transition in disordered ferromagnetic films Asymmetric metal-insulator transition in disordered ferromagnetic films

2010-03-22

arxiv.org/abs/1003.4195v1

Physics

Condensed Matter

Disordered Systems and Neural Networks

4 pages, 4 figures

Scientific paper

We present experimental data and a theoretical interpretation on the conductance near the metal-insulator transition in thin ferromagnetic Gd films of thickness b approximately 2-10 nm. A large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L_phi < b in the range of sheet resistances considered, so that the effective dimension is d = 3. The observed approximate fractional temperature power law of the conductivity is ascribed to the scaling regime near the transition. The conductivity data as a function of temperature and disorder strength collapse on to two scaling curves for the metallic and insulating regimes. The best fit is obtained for a dynamical exponent z approximately 2.5 and a correlation length critical exponent \nu' approximately 1.4 on the metallic side and a localization length exponent \nu approximately 0.8 on the insulating side.

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