Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions

Details Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions

2009-04-28

arxiv.org/abs/0904.4468v1

J. Appl. Phys. 106, 023911 (2009)

Physics

Condensed Matter

Materials Science

submitted to J. Appl. Phys. on Feb.12, 2009

Scientific paper

10.1063/1.3176894

In double spin filter (SF) tunnel junctions, the spin information is generated and analyzed purely from the SF effect with nonmagnetic electrodes. In this article we numerically evaluate the bias dependence of magnetoresistance in such tunnel junctions (nonmagnetic metal / SF / nonmagnetic insulator / SF / nonmagnetic metal), particularly in cases when different SF materials are utilized. A large magnetoresistance with nonmonotonic and asymmetric bias dependence is expected within the frame of WKB approximation. We illustrate the systematic influence of tunnel barrier height, tunnel barrier thickness, and exchange energy splitting on magnetoresistance, particularly focusing on the asymmetric behavior of the magnetoresistance bias dependence.

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