Assessment of High-Frequency Performance Limits of Graphene Field-Effect Transistors

Details Assessment of High-Frequency Performance Limits of Graphene Field-Effect Transistors Assessment of High-Frequency Performance Limits of Graphene Field-Effect Transistors

2011-02-07

arxiv.org/abs/1102.1457v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

24 pages, 7 figures

Scientific paper

High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20nm are examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is significant for sub-100nm graphene FET, it is possible to achieve a good transconductance and ballistic on-off ratio larger than 3 even at a channel length of 20nm. At a channel length of 20nm, the intrinsic cut-off frequency remains at a couple of THz for various gate insulator thickness values, but a thin gate insulator is necessary for a good transconductance and smaller degradation of cut-off frequency in the presence of parasitic capacitance. The intrinsic cut-off frequency is close to the LC characteristic frequency set by graphene kinetic inductance and quantum capacitance, which is about 100GHz \cdot {\mu}m divided by the gate length.

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