Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

Details Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

2009-04-08

arxiv.org/abs/0904.1271v4

Phys. Rev. B 80, 081307(R) (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevB.80.081307

We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of the donor electron directly into the SET island during the read-out phase. Simulations show that the charge transfer signals are typically \Delta q > 0.2 e - over an order of magnitude larger than achievable with metallic SETs on the SiO2 surface. A complete spin-based qubit structure is obtained by adding a local Electron Spin Resonance line for coherent spin control. This architecture is ideally suited to demonstrate and study the coherent properties of donor electron spins, but can be expanded and integrated with classical control electronics in the context of scale-up.

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