Physics – Condensed Matter – Materials Science
Scientific paper
2010-08-24
Solar Energy Materials & Solar Cells 65 (2001) 47-54
Physics
Condensed Matter
Materials Science
Scientific paper
10.1016/S0927-0248(00)00076-3
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ SixGe1-x -- a promising material for photovoltaics - and multicrystalline silicon for solar cells. In addition, this technique was shown to be appropriate for imaging of polishing-induced defects as well as such huge defects as "pin holes". Besides, previously unexplained "anomalous" (cubic power) dependence of signal of the scanning mid-IR-laser microscope in the optical-beam-induced light scattering mode on the photoexcitation power obtained for mechanically polished samples has now been attributed to the excess carrier scattering on charged linear defects, likely dislocation lines. The conclusion is made in the article that the scanning mid-IR-laser microscopy may serve as very effective tool for defect investigations in materials for modern photovoltaics.
Astafiev O. V.
Kalinushkin V. P.
Yuryev Vladimir A.
No associations
LandOfFree
Application of scanning mid-IR-laser microscopy for characterization of semiconductor materials for photovoltaics does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Application of scanning mid-IR-laser microscopy for characterization of semiconductor materials for photovoltaics, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Application of scanning mid-IR-laser microscopy for characterization of semiconductor materials for photovoltaics will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-393937