Antisite effect on ferromagnetism in (Ga,Mn)As

Details Antisite effect on ferromagnetism in (Ga,Mn)As Antisite effect on ferromagnetism in (Ga,Mn)As

2006-06-19

arxiv.org/abs/cond-mat/0606488v1

Phys. Rev. B 74, 155203 (2006)

Physics

Condensed Matter

Materials Science

10 pages, 7 figures

Scientific paper

10.1103/PhysRevB.74.155203

We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1-2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from Tc ~ p^0.33 is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.

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