Antilocalization in gated 2D quantum well structures with composition gradient

Details Antilocalization in gated 2D quantum well structures with composition gradient Antilocalization in gated 2D quantum well structures with composition gradient

2003-11-11

arxiv.org/abs/cond-mat/0311238v1

Int.J.Nanoscience 2, 543 (2003)

Physics

Condensed Matter

8 pages, 4 figures, to be published in International Journal of Nanoscience

Scientific paper

Low-field magnetoconductivity caused by the quantum interference is studied
in the gated 2D quantum well structures with the composition gradient. It is
shown that the Dresselhaus mechanism well describes an antilocalization minimum
on the conductivity-magnetic field curve.

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