Antiferromagnetic Domain Wall Engineering in Chromium Films

Details Antiferromagnetic Domain Wall Engineering in Chromium Films Antiferromagnetic Domain Wall Engineering in Chromium Films

2012-02-20

arxiv.org/abs/1202.4401v1

Physics

Condensed Matter

Strongly Correlated Electrons

submitted to APL

Scientific paper

We have engineered an antiferromagnetic domain wall by utilizing a magnetic frustration effect of a thin iron cap layer deposited on a chromium film. Through lithography and wet etching we selectively remove areas of the Fe cap layer to form a patterned ferromagnetic mask over the Cr film. Removing the Fe locally removes magnetic frustration in user-defined regions of the Cr film. We present x-ray microdiffraction microscopy results confirming the formation of a 90{\deg} spin-density wave propagation domain wall in Cr. This domain wall nucleates at the boundary defined by our Fe mask.

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