Anti-localization of graphene under substrate electric field

Details Anti-localization of graphene under substrate electric field Anti-localization of graphene under substrate electric field

2009-04-10

arxiv.org/abs/0904.1676v1

Europhys. Lett. 89, 17009 (2010).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures

Scientific paper

10.1209/0295-5075/89/17009

A simple criterion is provided how the (anti-)localization properties of graphene are determined in the presence of inter-valley scattering, Kane-Mele topological mass term, and Rashba spin-orbit interaction (SOI). A set of (pseudo) time-reversal operations show that the number of effective internal degrees of freedom, such as spin and pseudo-spins distinguishing the sublattice and the valley, is the crucial parameter for localization. It is predicted that perpendicular electric field due to gate voltage of the substrate drives the system to anti-localization by enhancing the Rashba SOI.

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