Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

Details Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

2010-09-17

arxiv.org/abs/1009.3450v3

Phys. Rev. B 83, 233402 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.83.233402

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 10^10 in the Hall resistance quantization measurements.

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