Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2003-03-19
Pyblished in JETP Letters Vol. 77, No. 6, pp.311-316 (2003)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
total 12 pages including 4 figures
Scientific paper
10.1134/1.1577763
There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We report results of a study of spin-orbit effects in a strained InGaAs/InP quantum well. The spin-orbit relaxation time, determined from the weak antilocalization effect, was found to depend non-monotonically on gate voltage. The spin orbit scattering rate had a maximum value of $5\times 10^{10}s^{-1}$ at an electron density of $n=3\times 10^{15} m^{-2}$. The scattering rate decreased from this for both increasing and decreasing densities. The smallest measured value was approximately $10^9 s^{-1}$ at an electron concentration of $n=6\times 10^{15} m^{-2}$. This behavior could not be explained by either the Rashba nor the bulk Dresselhaus mechanisms but is attributed to asymmetry or strain effects at dissimilar quantum well interfaces.
Coleridge P. T.
Poole Philip
Sachrajda Andrew
Studenikin Sergei A.
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