Anomalous relaxations and chemical trends at III-V nitride non-polar surfaces

Details Anomalous relaxations and chemical trends at III-V nitride non-polar surfaces Anomalous relaxations and chemical trends at III-V nitride non-polar surfaces

1998-05-19

arxiv.org/abs/cond-mat/9805220v2

Physics

Condensed Matter

Materials Science

RevTeX 7 pages, 8 figures included; also available at http://kalix.dsf.unica.it/preprints/; improved after review

Scientific paper

10.1103/PhysRevB.59.8026

Relaxations at nonpolar surfaces of III-V compounds result from a competition between dehybridization and charge transfer. First principles calculations for the (110) and (10$\bar{1}$0) faces of zincblende and wurtzite AlN, GaN and InN reveal an anomalous behavior as compared with ordinary III-V semiconductors. Additional calculations for GaAs and ZnO suggest close analogies with the latter. We interpret our results in terms of the larger ionicity (charge asymmetry) and bonding strength (cohesive energy) in the nitrides with respect to other III-V compounds, both essentially due to the strong valence potential and absence of $p$ core states in the lighter anion. The same interpretation applies to Zn II-VI compounds.

Affiliated with

Also associated with

No associations

Rating

Anomalous relaxations and chemical trends at III-V nitride non-polar surfaces does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Anomalous relaxations and chemical trends at III-V nitride non-polar surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anomalous relaxations and chemical trends at III-V nitride non-polar surfaces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-317031