Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots

Details Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots

2001-07-03

arxiv.org/abs/cond-mat/0107060v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.88.167401

Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit a strong non-parabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures nor in other types of quantum structures. Our study based on an eight-band strain-dependent ${\bf k}\cdot{\bf p}$ Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.

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