Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations

Details Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations

2009-10-11

arxiv.org/abs/0910.1981v1

Appl. Phys. Lett. 95, 172103 (2009)

Physics

Condensed Matter

Materials Science

12 pages, 3 figures, accepted for publication at Appl. Phys. Lett. accepted for publication at Appl. Phys. Lett

Scientific paper

10.1063/1.3257363

Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect (AHE). Usually, the reported AHE (1) is observable at temperatures above 10 K, (2) exhibits no hysteresis, and (3) changes the sign of slope. We observed a similar Hall resistance in Mn implanted Ge with the Mn concentration as low as 0.004%. We show that the puzzling AHE features can be explained by considering a two-band-like conduction in Ge:Mn.

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