Anomalous Hall Effect in SnMnEuTe and SnMnErTe mixed crystals

Physics – Condensed Matter – Materials Science

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2nd International Conference on Physics and Application of Spin Related Phenomena In Semiconductors, Wurzburg 23-26 July 2002,

Scientific paper

The Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS depends on temperature, its value decreases with the temperature increase. We observe that above ferromagnet-paramagnet transition temperature RS changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of RS, particularly change of the sign.

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