Anomalous Hall Effect in Disordered Multiband Metals

Details Anomalous Hall Effect in Disordered Multiband Metals Anomalous Hall Effect in Disordered Multiband Metals

2010-03-12

arxiv.org/abs/1003.2626v2

Phys. Rev. Lett. 105, 036601 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 2 figures Revised presentation, results unchanged

Scientific paper

10.1103/PhysRevLett.105.036601

We present a microscopic theory of the anomalous Hall effect in metallic multi-band ferromagnets, which accounts for all scattering-independent contributions, i.e., both the intrinsic and the so-called side jump. For a model of Gaussian disorder, the anomalous Hall effect is expressed solely in terms of the electronic band structure of the host material. Our theory handles systematically the interband-scattering coherence effects. We demonstrate the method in the two-dimensional Rashba and three-dimensional ferromagnetic (III,Mn)V semiconductor models. Our formalism is directly amenable to ab initio treatments for a wide range of ferromagnetic metals.

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