Anomalous giant piezoresistance in AlAs 2D electrons with anti-dot lattices

Details Anomalous giant piezoresistance in AlAs 2D electrons with anti-dot lattices Anomalous giant piezoresistance in AlAs 2D electrons with anti-dot lattices

2007-07-02

arxiv.org/abs/0707.0153v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 figures, submitted for publication

Scientific paper

10.1103/PhysRevLett.100.036602

An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the non-uniform strain in the anti-dot lattice and the exclusion of electrons occupying the two conduction band valleys from different regions of the sample. This is analogous to the well-known giant magnetoresistance (GMR) effect, with valley playing the role of spin and strain the role of magnetic field.

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