Anomalous Corrections to Hall Resistivity of Spin-Polarized Two-Dimensional Holes in a GaAs/AlGaAs Heterostructure

Details Anomalous Corrections to Hall Resistivity of Spin-Polarized Two-Dimensional Holes in a GaAs/AlGaAs Heterostructure Anomalous Corrections to Hall Resistivity of Spin-Polarized Two-Dimensional Holes in a GaAs/AlGaAs Heterostructure

2009-09-09

arxiv.org/abs/0909.1611v1

Phys. Rev. B 80, 121307(R) (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures, accepted in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.80.121307

Hall effect of two-dimensional holes that are spin-polarized by a strong parallel magnetic field was explored with a small tilt angle. The Hall resistivity increases nonlinearly with the magnetic field and exhibits negative corrections. The anomalous negative corrections increase with the perpendicular magnetization of the two-dimensional hole system. We attribute this to the anomalous Hall effect of spin-polarized carriers in a nonmagnetic system. The anomalous corrections to the conductivity exhibit non-monotonic dependence on the magnetic field.

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