Physics – Condensed Matter – Materials Science
Scientific paper
Jan 1991
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991jmats..26..423y&link_type=abstract
Journal of Materials Science (ISSN 0022-2461), vol. 26, Jan. 15, 1991, p. 423-428.
Physics
Condensed Matter
Materials Science
Cadmium Tellurides, Mercury Cadmium Tellurides, Mercury Tellurides, Metal Oxides, Oxide Films, Reaction Kinetics, Chemical Composition, Current Density, Infrared Detectors, Oxidation
Scientific paper
A study of the anodic polarization behavior of HgTe, CdTe and Hg(0.8)Cd(0.2)Te at constant current density was undertaken. It is argued that metal dissolution starts first, which renders the semiconductor surface negatively charged and tellurium rich. The process continues until the overpotential across the interface rises sufficiently to dissociate the tellurium at which point tellurium dissolution and oxidation begins. The continuation of this process evidently requires that the metal dissolution follows. This dissolution-precipitation mechanism for oxide nucleation is supported here. It is predicted that the molar ratio of HgTeO3 to CdTeO3 in the anodic oxide on Hg(0.8)Cd(0.2)Te should be about 1.1. The overvoltages required to initiate oxidation are shown to decrease when the current density is increased.
Warrier V. R. A.
Yadava D. S. R.
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