Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers

Details Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers

2005-05-11

arxiv.org/abs/cond-mat/0505278v1

Appl. Phys. Lett. 87, 242509 (2005)

Physics

Condensed Matter

Materials Science

3 pages, 3 figures

Scientific paper

10.1063/1.2123380

The dependence of the magnetic anisotropy of As-capped (Ga,Mn)As epilayers on the annealing parameters - temperature and time - has been investigated. A uniaxial magnetic anisotropy is evidenced, whose orientation with respect to the crystallographic axes changes upon annealing from [-110] for the as-grown samples to [110] for the annealed samples. Both cubic an uniaxial anisotropies are tightly linked to the concentration of charge carriers, the magnitude of which is controlled by the annealing process.

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