Anisotropy of heavy hole spin splitting and interference effects of optical polarization in semiconductor quantum wells subjected to an in-plane magnetic field

Details Anisotropy of heavy hole spin splitting and interference effects of optical polarization in semiconductor quantum wells subjected to an in-plane magnetic field Anisotropy of heavy hole spin splitting and interference effects of optical polarization in semiconductor quantum wells subjected to an in-plane magnetic field

2003-02-14

arxiv.org/abs/cond-mat/0302301v2

Physics

Condensed Matter

Materials Science

8 pages, 5 postscript figures

Scientific paper

Strong effects of optical polarization anisotropy observed previously in the quantum wells subjected to the in-plane magnetic field arrive at complete description within microscopic approach. Theory we develop involves two sources of optical polarization. First source is due to correlations between electron and heavy hole (HH) phases of $\psi $-functions arising due to electron Zeeman spin splitting and joint manifestation of low-symmetry and Zeeman interactions of HH in an in-plane magnetic field. In this case, four possible phase-controlled electron-HH transitions constitute the polarization effect, which can reach its maximal amount ($\pm $1) at low temperatures when only one transition survives. Other polarization source stems from the admixture of excited light-holes (LH) states to HH by low-symmetry interactions. The contribution of this mechanism to total polarization is relatively small but it can be independent of temperature and magnetic field. Analysis of different mechanisms of HH splitting exhibits their strong polarization anisotropy. Joint action of these mechanisms can result in new peculiarities, which should be taken into account for explanation of different experimental situations.

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