Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped InGaAs

Details Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped InGaAs Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped InGaAs

2010-11-15

arxiv.org/abs/1011.3307v1

Physics

Condensed Matter

Materials Science

Scientific paper

The anisotropic effective mass of electrons is directly measured using time-resolved THz- pump/THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory is used to attribute this anisotropy in the THz probe transmission to the nonparabolicity of the conduction band. Self-consistent light-matter coupling is shown to contribute significantly to the THz response.

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