Anisotropic spin relaxation in graphene

Details Anisotropic spin relaxation in graphene Anisotropic spin relaxation in graphene

2008-02-20

arxiv.org/abs/0802.2892v1

Phys. Rev. Lett. 101, 046601 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.101.046601

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field $B$ applied perpendicular to the graphene layer. Fields above 1.5 T force the magnetization direction of the ferromagnetic contacts to align to the field, allowing injection of spins perpendicular to the graphene plane. A comparison of the spin signals at B = 0 and B = 2 T shows a 20 % decrease in spin relaxation time for spins perpendicular to the graphene layer compared to spins parallel to the layer. We analyze the results in terms of the different strengths of the spin orbit effective fields in the in-plane and out-of-plane directions.

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