Physics – Condensed Matter – Disordered Systems and Neural Networks
Scientific paper
2002-03-29
Physics
Condensed Matter
Disordered Systems and Neural Networks
7 pages, 2 eps figures
Scientific paper
10.1063/1.1495067
A number of evidences suggests that thick-film resistors are close to a metal-insulator transition and that tunneling processes between metallic grains are the main source of resistance. We consider as a minimal model for description of transport properties in thick-film resistors a percolative resistor network, with conducting elements governed by tunneling. For both oriented and randomly oriented networks, we show that the piezoresistive response to an applied strain is model dependent when the system is far away from the percolation thresold, while in the critical region it acquires universal properties. In particular close to the metal-insulator transition, the piezoresistive anisotropy show a power law behavior. Within this region, there exists a simple and universal relation between the conductance and the piezoresistive anisotropy, which could be experimentally tested by common cantilever bar measurements of thick-film resistors.
Grimaldi Claudio
Ryser Peter
Straessler Sigfrid
No associations
LandOfFree
Anisotropic random resistor networks: a model for piezoresistive response of thick-film resistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Anisotropic random resistor networks: a model for piezoresistive response of thick-film resistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anisotropic random resistor networks: a model for piezoresistive response of thick-film resistors will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-240450