Anisotropic magnetoresistance of GaAs two-dimensional holes

Details Anisotropic magnetoresistance of GaAs two-dimensional holes Anisotropic magnetoresistance of GaAs two-dimensional holes

1999-11-16

arxiv.org/abs/cond-mat/9911239v3

Phys. Rev. Lett 84, 5592 (2000)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 5 figures. To appear in PRL 84

Scientific paper

10.1103/PhysRevLett.84.5592

Experiments on high-quality GaAs (311)A two-dimensional holes at low temperatures reveal a remarkable dependence of the magnetoresistance, measured with an in-plane magnetic field ($B$), on the direction of $B$ relative to both the crystal axes and the current direction. The magnetoresistance features, and in particular the value of $B$ above which the resistivity exhibits an insulating behavior, depend on the orientation of $B$. To explain the data, the anisotropic band structure of the holes and a re-population of the spin-subbands in the presence of $B$, as well as the coupling of the orbital motion to $B$, need to be taken into account.

Affiliated with

Also associated with

No associations

Rating

Anisotropic magnetoresistance of GaAs two-dimensional holes does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Anisotropic magnetoresistance of GaAs two-dimensional holes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anisotropic magnetoresistance of GaAs two-dimensional holes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-304450