Anisotropic magnetoresistance in nanocontacts

Details Anisotropic magnetoresistance in nanocontacts Anisotropic magnetoresistance in nanocontacts

2007-08-24

arxiv.org/abs/0708.3316v3

Phys. Rev. B 77, 165412 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 4 figures; revised for publication, new figures in greyscale

Scientific paper

10.1103/PhysRevB.77.165412

We present ab initio calculations of the evolution of anisotropic magnetoresistance (AMR) in Ni nanocontacts from the ballistic to the tunnel regime. We find an extraordinary enhancement of AMR, compared to bulk, in two scenarios. In systems without localized states, like chemically pure break junctions, large AMR only occurs if the orbital polarization of the current is large, regardless of the anisotropy of the density of states. In systems that display localized states close to the Fermi energy, like a single electron transistor with ferromagnetic electrodes, large AMR is related to the variation of the Fermi energy as a function of the magnetization direction.

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