Anisotropic Magnetoresistance in GaMnAs films

Details Anisotropic Magnetoresistance in GaMnAs films Anisotropic Magnetoresistance in GaMnAs films

2002-11-29

arxiv.org/abs/cond-mat/0211697v1

Physics

Condensed Matter

Materials Science

Presented at ICPS-26, July 2002

Scientific paper

The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 =< x =< 0.8 have been measured for three mutually orthogonal orientations of the external magnetic field. The anisotropy magnetoresistance decreases with increasing of the Mn content, which means that the magnetic disorder or defects scattering increases with increasing of Mn content. And also the magneto-crystalline anisotropy increases with increasing of Mn concentration.

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