Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot

Details Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot

2007-03-23

arxiv.org/abs/cond-mat/0703614v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Revtex4, 6 pages, 6 figures

Scientific paper

We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the latter field configuration, we observe a strong angular anisotropy of the enhanced current when B is rotated in the plane of the quantum dot layer. We attribute this behavior to the effect of the lowered symmetry of the QD eigenfunctions on the electron-electron interaction.

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