Anisotropic lattice deformation of InAs self-assembled quantum dots embedded in GaNAs strain compensating layers

Details Anisotropic lattice deformation of InAs self-assembled quantum dots embedded in GaNAs strain compensating layers Anisotropic lattice deformation of InAs self-assembled quantum dots embedded in GaNAs strain compensating layers

2004-12-28

arxiv.org/abs/cond-mat/0412721v1

Physics

Condensed Matter

Materials Science

8 pages with 5 postscript figures

Scientific paper

Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along the [001] growth direction while those parallel to the (001) crystal plane were kept unchanged

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