Anisotropic Electron Spin Lifetime in (In,Ga)As/GaAs (110) Quantum Wells

Details Anisotropic Electron Spin Lifetime in (In,Ga)As/GaAs (110) Quantum Wells Anisotropic Electron Spin Lifetime in (In,Ga)As/GaAs (110) Quantum Wells

2007-01-05

arxiv.org/abs/cond-mat/0701104v2

Phys. Rev. B75, 193304 (2007)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures, revised

Scientific paper

10.1103/PhysRevB.75.193304

Anisotropic electron spin lifetimes in strained undoped (In,Ga)As/GaAs (110) quantum wells of different width and height are investigated by time-resolved Faraday rotation and time-resolved transmission and are compared to the (001)-orientation. From the suppression of spin precession, the ratio of in-plane to out-of-plane spin lifetimes is calculated. Whereas the ratio increases with In concentration in agreement with theory, a surprisingly high anisotropy of 480 is observed for the broadest quantum well, when expressed in terms of spin relaxation times.

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