Anisotropic Electrical Spin Injection in Ferromagnetic Semiconductor Heterostructures

Details Anisotropic Electrical Spin Injection in Ferromagnetic Semiconductor Heterostructures Anisotropic Electrical Spin Injection in Ferromagnetic Semiconductor Heterostructures

2002-01-21

arxiv.org/abs/cond-mat/0201377v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 3 figures, to be published, Applied Physics Letters, March 11, 2002

Scientific paper

10.1063/1.1458535

A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by measuring the polarization of electroluminescence from an (In,Ga)As quantum well placed a distance d (20 to 420 nm) below the p-type ferromagnetic (Ga,Mn)As contact. In addition, a monotonic increase from 0.5 to 7% in the polarization is measured as d decreases for collection parallel to the growth direction, while the in-plane polarization from the perpendicular direction (~0.5%) remains unchanged.

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