Anholonomic spin manipulation in drift transport in semiconductors

Details Anholonomic spin manipulation in drift transport in semiconductors Anholonomic spin manipulation in drift transport in semiconductors

2010-07-06

arxiv.org/abs/1007.0909v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

2 figures

Scientific paper

We find that the electronic spin rotation induced by drift transport around a closed path in a wide variety of nonmagnetic semiconductors at zero magnetic field depends solely on the physical path taken. Physical paths that produce any possible spin rotation due to transport around a closed path are constructed for electrons experiencing strain or electric fields in (001), (110), or (111)-grown zincblende semiconductor quantum wells. Spin decoherence due to travel along the path is negligible compared to the background spin decoherence rate. The small size of the designed paths (<100 nm scale in GaAs) may lead to applications in nanoscale spintronic circuits.

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