Angular dependence of domain wall resistivity in artificial magnetic domain structures

Details Angular dependence of domain wall resistivity in artificial magnetic domain structures Angular dependence of domain wall resistivity in artificial magnetic domain structures

2006-06-23

arxiv.org/abs/cond-mat/0606614v1

Physics

Condensed Matter

Materials Science

14 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.97.206602

We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behaviour of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and systematic studies using domains patterned at various angles to the current flow are excellently described by an angular-dependent resistivity tensor containing perpendicular and parallel domain wall resistivities. We find that the latter are fully consistent with Levy-Zhang theory, which allows us to estimate the ratio of minority to majority spin carrier resistivities, rho-down/rho-up~5.5, in good agreement with thin film band structure calculations.

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