Angle-resolved photoemission in doped charge-transfer Mott insulators

Details Angle-resolved photoemission in doped charge-transfer Mott insulators Angle-resolved photoemission in doped charge-transfer Mott insulators

1999-05-13

arxiv.org/abs/cond-mat/9905185v1

Physics

Condensed Matter

Superconductivity

8 pages (RevTeX), 10 figures, submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.60.15414

A theory of angle-resolved photoemission (ARPES) in doped cuprates and other charge-transfer Mott insulators is developed taking into account the realistic (LDA+U) band structure, (bi)polaron formation due to the strong electron-phonon interaction, and a random field potential. In most of these materials the first band to be doped is the oxygen band inside the Mott-Hubbard gap. We derive the coherent part of the ARPES spectra with the oxygen hole spectral function calculated in the non-crossing (ladder) approximation and with the exact spectral function of a one-dimensional hole in a random potential. Some unusual features of ARPES including the polarisation dependence and spectral shape in YBa2Cu3O7 and YBa2Cu4O8 are described without any Fermi-surface, large or small. The theory is compatible with the doping dependence of kinetic and thermodynamic properties of cuprates as well as with the d-wave symmetry of the superconducting order parameter.

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